aot4n60/AOTF4N60/AOTF4N60l 600v,4a n-channel mosfet general description product summary v ds i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 2.2 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt t j , t stg t l symbol r ja r cs r jc * drain current limited by maximum junction temperatur e. -55 to 150 300 AOTF4N60l 65 -- 188 50 5 25 0.20 AOTF4N60l 600 30 4* 2.7* 1.2 -- units c/w 65 0.5 65 3.6 aot4n60 AOTF4N60 5 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c c w 2.7* mj a mj 104 35 avalanche current c single plused avalanche energy g repetitive avalanche energy c v gate-source voltage pulsed drain current c continuous drain current t c =25c i d 4 4* 2.7 16 2.5 94 t c =25c thermal characteristics the aot4n60 & AOTF4N60 & AOTF4N60l have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly in to new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 700v@150 drain-source voltage aot4n60 AOTF4N60 t c =100c a dv/dt v/ns maximum case-to-sink a maximum junction-to-case c/w c/w derate above 25 o c parameter 0.83 0.28 w/ o c junction and storage temperature range maximum junction-to-ambient a,d power dissipation b p d top view to - 220f to-220 g d s g d s g d s aot4n60 AOTF4N60(l) d rev.11.0: september 2017 www.aosmd.com page 1 of 6 downloaded from: http:///
symbol min typ max units 600 700 bv dss /?tj 0.69 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3 4 4.5 v r ds(on) 1.9 2.2 g fs 7.4 s v sd 0.77 1 v i s maximum body-diode continuous current 4 a i sm 16 a c iss 400 511 615 pf c oss 40 51 65 pf c rss 3.5 4.4 5.3 pf r g 3.3 4.2 6.3 q g 15 18 nc q gs 3 3.6 nc q gd 7.6 9.1 nc t d(on) 20.2 30 ns t r 28.7 42 ns t d(off) 36 51 ns t f 27 40 ns t rr 212 254 ns q rr 1.6 1.9 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c gate drain charge total gate charge v gs =10v, v ds =480v, i d =4a gate source charge static drain-source on-resistance v gs =10v, i d =2a body diode reverse recovery charge i f =4a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-off delaytime v gs =10v, v ds =300v, i d =4a, r g =25 gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time turn-on rise time body diode reverse recovery time reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v i d =250 a v ds =480v, t j =125c breakdown voltage temperature coefficient i dss zero gate voltage drain current v ds =600v, v gs =0v bv dss i d =250a, v gs =0v a v ds =0v, v gs =30v v drain-source breakdown voltage i f =4a,di/dt=100a/ s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =2a forward transconductance diode forward voltage a. the value of r ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r ja is the sum of the thermal impedence from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =2.5a, v dd =150v, r g =25 ? , starting t j =25 c rev.11.0: september 2017 www.aosmd.com page 2 of 6 downloaded from: http:///
typical electrical and thermal characteristics 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 2 4 6 8 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 7 8 9 r ds(on) ( ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =2a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. junction temperature rev.11.0: september 2017 www.aosmd.com page 3 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =4a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aot4n60 (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF4N60 (note f) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 1s 0 1 2 3 4 5 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 12: current de-rating (note b) 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for AOTF4N60l (note f) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 1s rev.11.0: september 2017 www.aosmd.com page 4 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal impe dance for aot4n60 (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1.2 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal impe dance for AOTF4N60 (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =3.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal impe dance for AOTF4N60l (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.11.0: september 2017 www.aosmd.com page 5 of 6 downloaded from: http:///
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev.11.0: september 2017 www.aosmd.com page 6 of 6 downloaded from: http:///
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